Infineon · Thyristors & Power Discretes · MPN F3L100R07W2E3_B11
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| Pd - Power Dissipation | 300W |
|---|---|
| Td(off) | 260ns;270ns;50ns |
| Td(on) | 50ns;60ns |
| Current - Collector(Ic) | 100A;117A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 190pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.45V;1.6V;1.7V |
| Switching Energy(Eoff) | 2.5mJ;3.35mJ;3.5mJ |
| Turn-On Energy (Eon) | 550uJ;850uJ;950uJ |
300W 650V IGBT Module IGBT Modules RoHS