Infineon · Thyristors & Power Discretes · MPN DF80R12W2H3FB11
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| Td(off) | 250ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 25ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.13nF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.00mA |
| Gate Charge(Qg) | 0.32uC |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.75V@20A,15V |
| Switching Energy(Eoff) | 800uJ |
IGBT 1.2kV 20A 20mW Through Hole,62.8x56.7mm