Infineon DF1400R12IP4D

Infineon · Thyristors & Power Discretes · MPN DF1400R12IP4D

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Specifications

Pd - Power Dissipation7.7kW
Operating Temperature-40℃~+150℃
Current - Collector(Ic)1.4kA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)82nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,1400A

Technical details

7.7kW 1.4kA 1.2kV FS (Field Stop) Single IGBTs RoHS

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