Infineon · Thyristors & Power Discretes · MPN DF1000R17IE4
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| Pd - Power Dissipation | - |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 81nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃ |
1.7kV IGBT Modules RoHS