Infineon · Thyristors & Power Discretes · MPN DDB6U75N16W1R
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| Pd - Power Dissipation | 335W |
|---|---|
| Td(off) | 370ns;440ns;460ns |
| Td(on) | 80ns;85ns |
| Current - Collector(Ic) | 69A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 380nC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.85V;2.15V;2.25V |
| Switching Energy(Eoff) | 3.1mJ;4.4mJ;4.9mJ |
| Turn-On Energy (Eon) | 4.7mJ;5.8mJ;6mJ |
335W 69A 1.2kV IGBT Modules RoHS