Infineon · Thyristors & Power Discretes · MPN DDB6U50N16W1RPBPSA1
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| Current - Collector(Ic) | 50A |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 11.1nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,50A |
| Operating Temperature | -40℃~+175℃@(Tj) |
50A 1.2kV FS (Field Stop) IGBT Modules RoHS