Infineon · Thyristors & Power Discretes · MPN DDB6U180N16RRB37
No reviews yet — be the first to review Infineon DDB6U180N16RRB37.
| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 6.2nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,100A |
| Operating Temperature | -40℃~+150℃@(Tj) |
20mW 100A 1.2kV FS (Field Stop) IGBT Modules RoHS