Infineon · Thyristors & Power Discretes · MPN DDB6U134N16RRB11
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| Pd - Power Dissipation | 400W |
|---|---|
| Current - Collector(Ic) | 125A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 5.1nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@15V,75A |
| Operating Temperature | -40℃~+150℃@(Tj) |
400W 125A 1.2kV IGBT Modules RoHS