Infineon · Thyristors & Power Discretes · MPN DDB2U30N08VRBOMA1307
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| Pd - Power Dissipation | 20mW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 880pF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.55V@15V,20A |
20mW 25A 600V Single IGBTs RoHS