Infineon · Thyristors & Power Discretes · MPN DD600S17K3B2NOSA1
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| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
|---|---|
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+125℃@(Tj) |
1.7kV IGBT Modules