Infineon · Thyristors & Power Discretes · MPN DD1200S33KL2C_B5
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| Pd - Power Dissipation | 1.8kW |
|---|---|
| Operating Temperature | -40℃~+125℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
1.8kW 3.3kV Single IGBTs