Infineon · Thyristors & Power Discretes · MPN BSM75GAR120DN2
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| Pd - Power Dissipation | 235W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,15A |
235W 30A 1.2kV FS (Field Stop) Single IGBTs RoHS