Infineon BSM75GAL120DN2

Infineon · Thyristors & Power Discretes · MPN BSM75GAL120DN2

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Specifications

Pd - Power Dissipation625W
Current - Collector(Ic)105A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)5.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@15V,75A

Technical details

625W 105A 1.2kV Single IGBTs RoHS

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