Infineon · Thyristors & Power Discretes · MPN BSM50GD120DN2
No reviews yet — be the first to review Infineon BSM50GD120DN2.
| Pd - Power Dissipation | 350W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 72A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 3.3nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,50A |
350W 72A 1.2kV Single IGBTs RoHS