Infineon BSM50GAL120DN2

Infineon · Thyristors & Power Discretes · MPN BSM50GAL120DN2

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Specifications

Pd - Power Dissipation400W
Current - Collector(Ic)78A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)3.3nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@15V,50A

Technical details

400W 78A 1.2kV Single IGBTs RoHS

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