Infineon BSM400GA170DLS

Infineon · Thyristors & Power Discretes · MPN BSM400GA170DLS

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Specifications

Pd - Power Dissipation3.12kW
Operating Temperature-
Current - Collector(Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)27nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-

Technical details

3.12kW 800A 1.7kV Single IGBTs RoHS

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