Infineon · Thyristors & Power Discretes · MPN BSM35GP120
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| Pd - Power Dissipation | 230W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 45A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.5nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.75V@15V,17.5A |
230W 45A 1.2kV Single IGBTs RoHS