Infineon BSM35GP120

Infineon · Thyristors & Power Discretes · MPN BSM35GP120

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Specifications

Pd - Power Dissipation230W
Operating Temperature-
Current - Collector(Ic)45A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)1.5nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,17.5A

Technical details

230W 45A 1.2kV Single IGBTs RoHS

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