Infineon · Thyristors & Power Discretes · MPN BSM35GD120DN2E3224
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| Pd - Power Dissipation | 280W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@15V,35A |
280W 50A 1.2kV Single IGBTs RoHS