Infineon BSM300GA170DLS

Infineon · Thyristors & Power Discretes · MPN BSM300GA170DLS

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Specifications

Pd - Power Dissipation2.5kW
Current - Collector(Ic)600A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)20nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+125℃@(Tj)

Technical details

2.5kW 600A 1.7kV IGBT Modules RoHS

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