Infineon BSM20GD60DLC

Infineon · Thyristors & Power Discretes · MPN BSM20GD60DLC

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Specifications

Pd - Power Dissipation125W
Current - Collector(Ic)32A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)1.1nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-

Technical details

125W 32A 600V IGBT Modules RoHS

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