Infineon BSM200GB120DN2

Infineon · Thyristors & Power Discretes · MPN BSM200GB120DN2

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Specifications

Pd - Power Dissipation-
Operating Temperature-
Current - Collector(Ic)290A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)13nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-

Technical details

290A 1.2kV Single IGBTs RoHS

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