Infineon · Thyristors & Power Discretes · MPN BSM150GD60DLCBOSA1
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| Pd - Power Dissipation | 570W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 180A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 6.5nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
570W 180A 600V Single IGBTs RoHS