Infineon · Thyristors & Power Discretes · MPN BSM150GB170DN2E3256HDLA1
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| Pd - Power Dissipation | 1.25kW |
|---|---|
| Current - Collector(Ic) | 300A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 10nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@15V,150A |
| Operating Temperature | - |
1.25kW 300A 1.7kV IGBT Modules RoHS