Infineon AUIRGP35B60PD-E

Infineon · Thyristors & Power Discretes · MPN AUIRGP35B60PD-E

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Specifications

Pd - Power Dissipation308W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)42ns
Switching Energy(Eoff)215uJ
Turn-On Energy (Eon)220uJ

Technical details

308W 60A 600V NPT (Non-Punch Through) TO-247AC Single IGBTs RoHS

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