Infineon · Thyristors & Power Discretes · MPN AUIRGF66524D0-IR
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| Td(off) | 75ns |
|---|---|
| Pd - Power Dissipation | 214W |
| Td(on) | 30ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 80nC |
| Reverse Recovery Time(trr) | 176ns |
| Switching Energy(Eoff) | 280uJ |
214W 60A 600V TO-247AC Single IGBTs RoHS