Infineon AUIRG4BC30SSTRL

Infineon · Thyristors & Power Discretes · MPN AUIRG4BC30SSTRL

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Specifications

Td(off)540ns
Pd - Power Dissipation100W
Td(on)22ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)34A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)13pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@250uA
Vce Saturation(VCE(sat))1.84V@34A,15V
Switching Energy(Eoff)3.45mJ
Turn-On Energy (Eon)260uJ

Technical details

IGBT 600V 100W Surface Mount D2PAK

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