Infineon · Thyristors & Power Discretes · MPN AIKW50N65RF5XKSA1
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| Td(off) | 156ns |
|---|---|
| Pd - Power Dissipation | 250W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 20ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 109nC |
250W 80A 650V TO-247-3 Single IGBTs RoHS