Infineon · Thyristors & Power Discretes · MPN AIKQ200N75CP2XKSA1
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| Pd - Power Dissipation | 576W |
|---|---|
| Td(off) | 266ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 89ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 750V |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2.6mA |
| Vce Saturation(VCE(sat)) | 1.5V@200A,15V |
| Switching Energy(Eoff) | 7mJ |
| Turn-On Energy (Eon) | 15.3mJ |
IGBT 750V 200A 576W Through Hole TO-247-3