Infineon · Thyristors & Power Discretes · MPN AIKQ120N75CP2XKSA1
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| Pd - Power Dissipation | 682W |
|---|---|
| Td(off) | 244ns |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | 71ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 750V |
| Input Capacitance(Cies) | 13.125nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.6mA |
| Vce Saturation(VCE(sat)) | 1.5V@120A,15V |
| Gate Charge(Qg) | 731nC@15V |
| Switching Energy(Eoff) | 3.8mJ |
| Turn-On Energy (Eon) | 6.82mJ |
IGBT 750V 150A 682W Through Hole TO-247-3