Infineon · Thyristors & Power Discretes · MPN AIKBE50N65RF5ATMA1
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| Td(off) | 136ns |
|---|---|
| Pd - Power Dissipation | 326W;163W |
| Td(on) | 16.8ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 96A;65A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 10pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V |
| Vce Saturation(VCE(sat)) | 1.66V |
| Collector Cut-Off Current (Ices) | 16uA |
| Switching Energy(Eoff) | 90uJ |
| Turn-On Energy (Eon) | 120uJ |
650V TO-263-7 Single IGBTs RoHS