Infineon · Thyristors & Power Discretes · MPN AIGW50N65H5
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| Pd - Power Dissipation | 270W |
|---|---|
| Td(off) | 173ns |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA |
| Vce Saturation(VCE(sat)) | 1.66V@50A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 160uJ |
| Turn-On Energy (Eon) | 450uJ |
270W 650V TO-247-3-41 Single IGBTs RoHS