Infineon AIGB40N65H5ATMA1

Infineon · Thyristors & Power Discretes · MPN AIGB40N65H5ATMA1

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Specifications

Operating Temperature-
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Turn-On Energy (Eon)-

Technical details

40A 650V TO-263 Single IGBTs RoHS

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