Infineon · Thyristors & Power Discretes · MPN AIGB30N65F5ATMA1
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| Td(off) | 188ns |
|---|---|
| Pd - Power Dissipation | 188W |
| Td(on) | 25ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Vce Saturation(VCE(sat)) | 2.1V@30A,15V |
| Switching Energy(Eoff) | 100uJ |
| Turn-On Energy (Eon) | 330uJ |
IGBT 650V 30A Surface Mount TO-263