Infineon 2ED300C17STROHS

Infineon · Thyristors & Power Discretes · MPN 2ED300C17STROHS

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Specifications

Collector-Emitter Breakdown Voltage (Vces)1.7kV
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-

Technical details

1.7kV IGBT Modules RoHS

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