HXY MOSFET · Thyristors & Power Discretes · MPN NGTB40N120FL3WG-HXY
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| Pd - Power Dissipation | 441W |
|---|---|
| Td(off) | 262ns |
| Td(on) | 25ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Vce Saturation(VCE(sat)) | 2.05V@40A,15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Input Capacitance(Cies) | 3.98nF |
441W 80A 1.2kV TO-247 Single IGBTs RoHS