HXY MOSFET · Thyristors & Power Discretes · MPN NGTB30N135IHRWG-HXY
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| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 190ns |
| Td(on) | 51ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 18pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@0.5mA |
| Vce Saturation(VCE(sat)) | 2.25V@30A,15V |
| Output Capacitance(Coes) | 51pF |
| Gate Charge(Qg) | 120nC@15V |
| Switching Energy(Eoff) | 1.3mJ |
250W 60A 1.35kV TO-247 Single IGBTs RoHS