HXY MOSFET · Thyristors & Power Discretes · MPN IXYH55N120C4-HXY
No reviews yet — be the first to review HXY MOSFET IXYH55N120C4-HXY.
| Pd - Power Dissipation | 652W |
|---|---|
| Td(off) | 280ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 39ns |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 179pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Vce Saturation(VCE(sat)) | 2V@60A,15V |
| Reverse Recovery Time(trr) | 44ns |
| Switching Energy(Eoff) | 2.9mJ |
652W 120A 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS