HXY MOSFET · Thyristors & Power Discretes · MPN IXYH120N65B3-HXY
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| Td(off) | 195ns |
|---|---|
| Pd - Power Dissipation | 429W |
| Td(on) | 27ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 26pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@0.88mA |
| Vce Saturation(VCE(sat)) | 1.45V@100A,15V |
| Reverse Recovery Time(trr) | 123ns |
| Switching Energy(Eoff) | 1.65mJ |
| Turn-On Energy (Eon) | 3.3mJ |
| Input Capacitance(Cies) | 3.452nF |
429W 150A 650V TO-247 Single IGBTs RoHS