HXY MOSFET · Thyristors & Power Discretes · MPN IXXX160N65B4-HXY
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| Td(off) | 379ns |
|---|---|
| Pd - Power Dissipation | 1kW |
| Td(on) | 94ns |
| Current - Collector(Ic) | 240A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 70pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@0.25mA |
| Vce Saturation(VCE(sat)) | 1.6V@160A,15V |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 9.81mJ |
| Turn-On Energy (Eon) | 6.37mJ |
| Input Capacitance(Cies) | 10.203nF |
1kW 240A 650V TO-247P Single IGBTs RoHS