HXY MOSFET · Thyristors & Power Discretes · MPN IXXH60N65B4-HXY
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| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 124ns |
| Td(on) | 24ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Vce Saturation(VCE(sat)) | 2V@60A,15V |
| Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 1.4mJ |
250W 100A 650V FS (Field Stop) TO-247 Single IGBTs RoHS