HXY MOSFET · Thyristors & Power Discretes · MPN IXGH40N120B2D1-HXY
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| Td(off) | 195ns |
|---|---|
| Pd - Power Dissipation | 417W |
| Td(on) | 48ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 35pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.3V@40A,15V |
| Reverse Recovery Time(trr) | 375ns |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 2.65mJ |
| Input Capacitance(Cies) | 5.047nF |
417W 80A 1.2kV TO-247 Single IGBTs RoHS