HXY MOSFET · Thyristors & Power Discretes · MPN IKY75N120CH3XKSA1-HXY
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| Td(off) | 188ns |
|---|---|
| Pd - Power Dissipation | 930W |
| Td(on) | 63ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 65pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@2.6mA |
| Vce Saturation(VCE(sat)) | 2.35V@75A,15V |
| Reverse Recovery Time(trr) | 366ns |
| Switching Energy(Eoff) | 3mJ |
| Turn-On Energy (Eon) | 3.9mJ |
930W 100A 1.2kV TO-247P-4L Single IGBTs RoHS