HXY MOSFET · Thyristors & Power Discretes · MPN IKQ140N120CH7XKSA1-HXY
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| Td(off) | 359ns |
|---|---|
| Pd - Power Dissipation | 1.091kW |
| Td(on) | 183ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 240A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 59.4pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.17V@2.24mA |
| Vce Saturation(VCE(sat)) | 1.55V@140A,15V |
| Reverse Recovery Time(trr) | 137ns |
| Switching Energy(Eoff) | 8.9mJ |
| Turn-On Energy (Eon) | 11.9mJ |
1.091kW 240A 1.2kV TO-247P Single IGBTs RoHS