HXY MOSFET · Thyristors & Power Discretes · MPN IHW30N135R5-HXY
No reviews yet — be the first to review HXY MOSFET IHW30N135R5-HXY.
| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 190ns |
| Td(on) | 51ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 18pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@0.5mA |
| Vce Saturation(VCE(sat)) | 1.95V@30A,15V |
| Reverse Recovery Time(trr) | 330ns |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | 2.6mJ |
250W 60A 1.35kV TO-247 Single IGBTs RoHS