HXY MOSFET · Thyristors & Power Discretes · MPN IGW40N65F5-HXY
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| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 136ns |
| Td(on) | 26ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 70A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 1.52nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Gate Charge(Qg) | 57nC@15V |
| Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 430uJ |
IGBT 650V 70A 250W Through Hole TO-247