HXY MOSFET BT137-800E

HXY MOSFET · Thyristors & Power Discretes · MPN BT137-800E

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Specifications

Operating Temperature-40℃~+125℃
Holding Current (Ih)15mA
Current - Gate Trigger(Igt)25mA
Voltage - On State(Vtm)1.6V
Average Gate Power Dissipation (PG(AV))500mW
Current - On State(It(RMS))8A
Peak off - state voltage(Vdrm)800V
Current - Surge(Itsm@f)65A@25Hz
Gate Trigger Voltage (Vgt)1.3V

Technical details

15mA 25mA 800V TO-252-2L TRIACs RoHS

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