HXY MOSFET · Thyristors & Power Discretes · MPN BIDW50N65T-HXY
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| Td(off) | 122ns |
|---|---|
| Pd - Power Dissipation | 300W |
| Td(on) | 24ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 92pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Vce Saturation(VCE(sat)) | 1.95V@50A,15V |
| Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 1.14mJ |
| Turn-On Energy (Eon) | 1.38mJ |
300W 100A 650V FS (Field Stop) TO-247 Single IGBTs RoHS