HXY MOSFET · Thyristors & Power Discretes · MPN APT70GR120B2-HXY
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| Td(off) | 185ns |
|---|---|
| Pd - Power Dissipation | 930W |
| Td(on) | 46ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 61pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.3V@75A,15V |
| Reverse Recovery Time(trr) | 400ns |
| Switching Energy(Eoff) | 2.75mJ |
| Turn-On Energy (Eon) | 5.69mJ |
| Input Capacitance(Cies) | 9.812nF |
930W 150A 1.2kV TO-247P Single IGBTs RoHS