HXY MOSFET · Thyristors & Power Discretes · MPN APT68GA60B-HXY
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| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 136ns |
| Td(on) | 26ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 70A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 430uJ |
| Turn-On Energy (Eon) | 900uJ |
250W 70A 650V TO-247 Single IGBTs RoHS