HXY MOSFET · Thyristors & Power Discretes · MPN AFGHL75T65SQ-HXY
No reviews yet — be the first to review HXY MOSFET AFGHL75T65SQ-HXY.
| Pd - Power Dissipation | 330W |
|---|---|
| Td(off) | 130ns |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Vce Saturation(VCE(sat)) | 2.1V@75A,15V |
| Reverse Recovery Time(trr) | 95ns |
| Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 2.04mJ |
330W 90A 650V TO-247 Single IGBTs RoHS